A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions. When you purchase through links on our ...
A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
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A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of ...
A collaborative biosensing system is developed for amplification-free RNA/miRNA detection by integrating Type III CRISPR-Cas10 system with a graphene field-effect transistor (GFET). Continuous ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator Figure 1: A photograph of the ...
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