The shielded-gate MOSFET can now provide the answer for designers of dc/dc power supplies in the 40 to 200-V range Regulatory bodies as well as end customers find themselves striving for higher ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has released “TCK421G” for 20V power lines as the first product in its new “TCK42xG Series” of MOSFET ...

The seven low-side or high-side drive topology parts are: MCP14LH2101, MCP14LH2106, MCP14LH21064, MCP14LH2190, MCP14LH21904, MCP14LH2181, and MCP14LH21814.

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...

The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...

Microchip has announced a 1,200V dual digital gate driver for electric transport. Called AgileSwitch 2ASC-12A2HP, “the gate driver provides multiple levels of control and a higher level of protection ...

Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for ...