The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

Abstract: Bond wire lift-off is a major aging failure mode in insulated gate bipolar transistor (IGBT) modules, critically impacting their safe and reliable operation. This article presents power ...

Abstract: Certain insulated gate bipolar transistor (IGBT) modules, such as automotive-grade IGBT modules, are often subjected to harsh service environments. Generally, two factors, temperature ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

In recent years, with the rapid development of new energy vehicles, IGBT, as the main cost component of the controller for new energy vehicles, has also ushered in an outbreak. It is expected that by ...