Abstract: This paper investigates a gate voltage dependence of channel length modulation for 14 nm FinFETs. An analytical MOSFET current model is applied to 14 nm FinFETs. The model includes the gate ...
The enhancement of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) performance through varying channel length is investigated, employing NanoHUB software. NanoHUB provides a platform for ...
Abstract: This paper is concerned with the investigation of MOSFETs in weak inversion. A new model is proposed for the transistor operating in the saturation zone. In order to validate the model, ...
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