GDDR7 is the state-of-the-art graphics memory solution with a performance roadmap of up to 48 Gigatransfers per second (GT/s) and memory throughput of 192 GB/s per GDDR7 memory device. The next ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

TOKYO, July 31, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded ...

The rapid advancement of artificial intelligence (AI) is driving unprecedented demand for high-performance memory solutions. AI-driven applications are fueling significant year-over-year growth in ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

New UFS Devices with Kioxia’s 8th Generation BiCS FLASH™ (1) Boost Speed and Power Efficiency UFS Ver. 4.1 devices from Kioxia integrate the company’s innovative BiCS FLASH™ 3D flash memory and a ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...