In 5nm and 7nm nodes, the source/drain contact area of the transistors is so small that the contact resistance threatens to result in suboptimal transistor functioning. Researchers have therefore been ...

Washington, D.C. &#151 Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...

Intel has unveiled technical breakthroughs that maintain a pipeline for the company’s future process roadmap, underscoring the continuation and evolution of Moore’s Law. At the 2023 IEEE International ...

X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm ...

At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...

Intel revealed some details about the manufacturing advancements it's working on, more information will follow at next week's IDF. Intel's 32nm CPU process is now certified and Westmere CPU wafers are ...