Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Based on high-frequency high-voltage vertical field-effect transistors (HVVFETs), the HVV1011-300, HVV1214-025, and HVV1214-100 power transistors deliver frequency bandwidth, voltage level, and power ...
Cree Semiconductor Re-Enters High-Power RF Transistor Market SUMMARY HED: Gallium nitride transistors deliver 300 Watts at 2.7 GHz At the start of the DTV transition, Westinghouse and Cree partnered ...
Dublin, Jan. 02, 2025 (GLOBE NEWSWIRE) -- The "Power Electronic Testing Market by Power Discrete (Diode, Transistor, Thyristor), Power Module, Power Integrated Circuit (IC); Electromagnetic ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...
SAN FRANCISCO--(BUSINESS WIRE)--June 13, 2006--RF Devices in Over-Molded Plastic Package Designed to Perform on Par with Air-Cavity Package at 2 GHz, Reduce Amplifier Cost and Streamline Automated ...
While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.
IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...
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