Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

Efficient Power Conversion has introduced a 1.7mΩ (typ) 100V 10.2mm2 footprint enhancement-mode GaN transistor. THe chip-scale part, named EPC2071, it from the company’s fifth GaN hemt generation and, ...

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

It’s just an unavoidable fact: electronic components’ parameters drift with temperature. Even the most stable voltage references, op amps, crystal oscillators, etc., have non-zero temperature ...