The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be ...

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.

Scientists have demonstrated the first reproducible, controllable silicon transistors that are turned on and off by the motion of individual electrons. The experimental devices, designed and ...

Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...