According to a letter sent to its distributors, the storage-hardware vendor (Transcend) has not received any new NAND flash memory chips since October. The notification stated that leading flash-chip ...

South Korean memory giant SK Hynix is fast-tracking the development of its next-generation 300-layer V10 NAND flash memory, according to reports in Korean media outlets Hankyung... Simon Chen, ...

Samsung Electronics is reportedly preparing to convert portions of its NAND flash production lines in Pyeongtaek and Hwaseong into DRAM facilities as the company races to meet surging demand for ...

Abstract: In this article, we propose a coupling-free readout scheme designed for a hardware neural network employing memcapacitive devices based on Si MOS capacitors having a charging trapping layer.

Abstract: A new physics-based model to explain program transient of NAND Flash memory cells is developed in this work. Unlike preexisting model, which incorporated structural features of cylindrical ...