Researchers developed high precision chips and a new measuring adapter enabling simultaneous contact with eight electrode ...
The FBH ranks among the world’s leading research institutes in chip design and the fabrication of GaAs-based diode lasers. It ...
This ESA/Hubble picture highlights another view of a distant stellar birthplace. Captured in a parallel field to a recently released image, this scene reveals a neighboring region of the N159 ...
Abstract: The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is ...
Do you suffer from parallelophobia? If you deal with an irrational fear of parallel parking, you're not alone. Nearly half of all Americans suffer from this condition, and in Britain, many would ...
The STGWA30IH160DF2 IGBT developed by STMicroelectronics combines a breakdown-voltage rating of 1,600 V and high thermal performance with efficiency in soft-switching topologies, plus easy paralleling ...
Abstract: Insulated-gate bipolar transistors (IGBTs) require anti-parallel diodes for freewheeling and on-state voltage measuring circuits (OVMCs) for condition monitoring. This letter presents an ...
At a designer forum dedicated to wide-bandgap technologies, Infineon highlighted the advantages of GaN technology in motor drives. Gallium nitride HEMTs have emerged as a transformative technology in ...
Superconductivity is an advantageous property observed in some materials, which entails an electrical resistance of zero at extremely low temperatures. Superconductors, materials that exhibit this ...
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...
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